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NASA’s Artemis II mission has returned safely after a ten-day journey beyond Earth orbit. Alongside the mission’s broader objectives, the flight also served as a real-world validation of critical onboard electronics operating in deep-space conditions.

For eeNews Europe readers, the mission highlights how radiation-hardened semiconductor design remains central to spacecraft reliability, particularly as missions extend further from Earth and operate for longer durations.

Radiation-hardened semiconductors support Orion systems

Infineon reported that its radiation-hardened (rad-hard) semiconductors operated without fault throughout the Artemis II mission, supporting key systems within the Orion capsule. These devices, developed by its IR HiRel division, were used across power management, control and data communication functions.

“Space programs require technologies and partners they can rely on for decades. Infineon is a critical technology partner, and we are proud to have once again contributed to the success of a historic space mission,” said Mike Mills, Senior Vice President and General Manager of IR HiRel at Infineon. “The space industry is evolving rapidly: more missions, more data, more electrification – while facing increasing pressure on size, weight and power consumption. In this equation, semiconductors are becoming a central focus in space. The fact that our components performed flawlessly from the first to the last minute of the Artemis II mission is no coincidence. It is the result of decades of engineering expertise, state-of-the-art qualification processes and a deep understanding of what semiconductors must deliver in space.”

Infineon traces its space heritage back to the 1970s, with components deployed across satellite systems, the International Space Station and earlier NASA and ESA missions. The company says its rad-hard portfolio is qualified to standards including MIL-PRF-38535 Class V and ESA ESCC, addressing the risks posed by high-energy particles beyond Earth’s magnetic field.

GaN technology enters space-qualified domain

Beyond silicon-based devices, Infineon is also advancing gallium nitride for space applications. The company highlights its internally manufactured 100 V GaN transistor, qualified to JANS standards, as a step towards wider adoption of wide-bandgap devices in orbit.

GaN technology can potentially reduce switching losses and improve power density, which may translate into smaller magnetic components and lower system weight. These factors are increasingly relevant for spacecraft design, where mass and efficiency constraints remain critical.

Infineon’s broader portfolio spans Si power MOSFETs, GaN transistors, gate drivers, relays and RF components, supported by in-house radiation testing. The company positions this as part of a system-level approach, where semiconductor design, packaging and qualification are optimised together to meet long-duration mission requirements.

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