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... eeNews Europe

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ROHM adds top-side cooling package for SiC MOSFETs
Alina Neacsu · 2026-06-12 · via ... eeNews Europe

ROHM adds top-side cooling package for SiC MOSFETs

New Products |

By Alina Neacsu



ROHM has developed the TSC3PAK, a top-side cooling package for SiC MOSFETs aimed at high-voltage power conversion in electric vehicles and industrial systems. The 14.00 × 18.58 × 3.50 mm surface-mount package is designed to combine automated mounting with heat dissipation closer to conventional through-hole packages such as TO-247-4L.

The development will interest eeNews Europe readers because packaging is becoming a key design factor as SiC devices move beyond traction inverters into onboard chargers, electric compressors, server power supplies and PV inverters.

Top-side cooling for automated assembly

Conventional SiC MOSFETs used in higher-power applications have often relied on through-hole packages, which support strong thermal performance but usually require manual mounting and limit efforts to reduce system height. ROHM’s TSC3PAK takes a different approach by placing the heat dissipation surface on the top of the package while retaining surface-mount compatibility.

This could help designers reduce assembly complexity in applications such as xEV onboard chargers and electric compressors, where thermal management, reliability and production efficiency are closely linked. ROHM says the package offers heat dissipation performance comparable with through-hole devices, while supporting automated mounting.

Creepage distance supports 1200 V designs

The TSC3PAK uses ROHM’s proprietary groove structure to provide a creepage distance of 6.66 mm. According to the company, this allows the package to support an AC peak voltage of 1200 V in a Pollution Degree 2 environment.

That detail matters for engineers working on high-voltage insulation design, where package geometry can affect safety margins, board layout and manufacturing cost. The package is intended to remain compatible with products already widely used in the market, potentially easing adoption in existing design flows.

4th generation SiC MOSFETs

Products using the package integrate ROHM’s 4th-generation SiC MOSFETs, which are designed for low on-resistance and high-speed switching. In power conversion circuits, those characteristics can help reduce switching losses and improve system efficiency, although the final benefit will depend on topology, thermal design and operating conditions.

Mass production of the TSC3PAK-based products started in June 2026. ROHM says simulation models are available on its website to support circuit design evaluation.

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