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Infineon has expanded its XHP 2 power module range with 2300 V CoolSiC MOSFET variants for high-voltage energy systems. The SiC modules support DC-link voltages up to 1500 V, reflecting the shift toward higher system voltages in renewable energy infrastructure.

For eeNews Europe readers, the development is relevant because it addresses efficiency, power density and thermal performance in large-scale converters used in wind, photovoltaic and battery storage systems.

Higher-voltage SiC module platform

The XHP 2 CoolSiC MOSFET modules are designed to reduce switching and conduction losses compared with silicon-based alternatives. This could help inverter designers improve efficiency and power density, or increase switching frequency to reduce harmonics and system size.

Infineon is offering the modules with on-resistance values from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. The XHP 2 package also supports symmetrical switching behaviour, which can simplify paralleling in large power converters.

Focus on renewable energy converters

The modules integrate Infineon’s .XT interconnection technology, intended to support reliability and operational lifetime. Variants are also available with pre-applied thermal interface material, which can reduce assembly complexity and support more consistent thermal behaviour.

Infineon says the devices have shown system-level results in renewable energy use cases. In a wind power demonstration system, the modules achieved a power density of 300 kW/L. Tests in battery storage systems showed semiconductor losses of less than 0.7 percent of output power.

Availability

The 2300 V XHP 2 CoolSiC MOSFET modules are available now from Infineon and its distribution partners. The listed variants are FF1000UXTR23T2M1, FF1300UXTR23T2M1, FF2000UXTR23T2M1 and FF1000UXTR23T2M1_B5.

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