The etching process is one of the most important processes in semiconductor manufacturing. We have introduced the state-of-the-art deep learning model to predict the etching profiles. However, the significant problems violating physics have been found through various techniques such as explainable artificial intelligence and representation of prediction uncertainty. To address this problem, this paper presents a novel approach to apply the inductive biases for etching process. We demonstrate that our approach fits the measurement faster than physical simulator while following the physical behavior. Our approach would bring a new opportunity for better etching process with higher accuracy and lower cost.