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WIN Semiconductors has qualified the process behind its NP12-0B GaN platform for 40 V operation, extending the 0.12 μm GaN-on-SiC technology into higher-power RF front-end designs.

The Taiwanese pure-play compound semiconductor foundry says the qualification covers power amplifiers, transmit/receive switches and single-chip front-end monolithic microwave integrated circuits (MMICs). The platform is aimed at next-generation radio access networks, satellite communications and radar systems, where designers are trying to combine output power, switching performance and low-noise receive paths without spreading the front end across too many devices.

NP12-0B GaN moves from 28 V to 40 V

This is a production qualification rather than a new platform launch. As previously reported by eeNews Europe when WIN Semi announced its mmWave GaN-on-SiC process, NP12-0B was introduced as a rugged RF GaN HEMT process for deep-saturation and high-compression pulsed or continuous-wave operation.

The earlier version was qualified for 28 V operation, with power amplifier use up to 50 GHz. The new qualification raises the reliable operating voltage to 40 V and broadens the design space for front-end products that need more power density or fewer discrete RF functions.

NP12-0B GaN performance figures

For power amplifier designs, WIN says output transistors tuned for maximum power at 18 GHz and 40 V deliver 7.9 W/mm saturated output power, 13.3 dB gain and 42% power-added efficiency. When tuned for maximum efficiency, the same power cell shows 6.1 W/mm saturated output power, 14.6 dB gain and 55% PAE at 18 GHz.

The switch figures are also part of the pitch. In a common-gate switch configuration, devices show insertion loss below 0.4 dB, power handling above 42 dBm and sub-20 ns switching speed using a 40 V control voltage.

WIN is also positioning NP12-0B GaN for receive-side functions. The company gives a typical minimum noise figure of 1 dB with 10 dB associated gain at 20 GHz, which is intended to support low-noise amplifier integration on the same front-end platform.

The NP12-0B platform has been in production since 2024 and is available with WIN’s Enhanced Moisture Ruggedness option for plastic packaging. The updated 40 V process design kit, covering power amplifier, switch and low-noise amplifier designs, is due for customer download in Q2 2026.

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