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By Alina Neacsu
STMicroelectronics has introduced a series of low-resistance MOSFETs aimed at improving efficiency and reducing footprint in automotive power distribution and battery management systems. Based on its Smart STripFET F8 technology, the devices focus on lowering conduction losses while maintaining compact packaging.
For eeNews Europe readers, this development reflects ongoing pressure on automotive power electronics to deliver higher current handling within tighter space and thermal constraints, particularly in electrified and software-defined vehicle architectures.
The first device in the series, the STL059N4S8AG, is a 40V N-channel MOSFET rated at 420A with an RDS(on) of 0.59mΩ. It is housed in a PowerFLAT 5×6 package, which is designed to reduce PCB area while supporting thermal performance through efficient heat dissipation.
The Smart STripFET F8 technology builds on ST’s existing STripFET platform, introducing a modified trench gate structure. This change is intended to improve on-state behaviour and silicon-area efficiency, which are key parameters in high-current switching applications. Lower RDS(on) directly reduces conduction losses, which can help improve overall system efficiency, particularly in power distribution paths.
The device supports operation up to 175°C and is qualified to AEC-Q101, indicating suitability for automotive environments. The inclusion of wettable flanks is aimed at enabling optical inspection during manufacturing, which remains a requirement in automotive assembly lines.
The MOSFETs are positioned for use in high-current power distribution as well as battery management systems. In these applications, reducing resistive losses can translate into lower thermal stress and potentially improved system reliability.
In battery management systems, where switching devices are used for charge and discharge control, lower RDS(on) can contribute to improved efficiency during energy transfer. This may support longer driving range in electric vehicles by reducing energy losses within the power electronics stage.
ST also highlights compatibility with its STi²Fuse VIPower gate drivers, which provide tunable protection features. These can be used to safeguard PCB traces and connectors in fault conditions, an increasingly relevant requirement as vehicle electrical systems scale in complexity.
Additional variants are planned, including the STL075N4S8AG rated at 350A with 0.75mΩ RDS(on), and the STK035N4S8AG rated at 780A with 0.35mΩ. These options suggest a broader portfolio automotive power MOSFETs aimed at different current and efficiency trade-offs.
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