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ROHM has introduced its 5th-generation silicon carbide devices, aimed at cutting conduction losses in demanding power conversion systems. The company says the latest SiC MOSFETs reduce on-resistance at high temperatures by around 30% compared with its previous generation, under the same breakdown voltage and chip size conditions.

For eeNews Europe readers, the development is relevant because thermal performance remains a practical constraint in both electric drivetrains and high-density industrial power systems. It also reflects how the design of SiC MOSFETs is shifting from early adoption toward broader use in automotive, data centre and energy infrastructure.

Lower losses at higher temperatures

The latest addition to ROHM’s EcoSiC line is positioned for applications where efficiency and heat handling are closely linked, including traction inverters in electric vehicles, onboard chargers, DC-DC converters, and industrial power supplies. ROHM is also pointing to AI servers, data centres, photovoltaic inverters, energy storage systems and UPS platforms as target markets.

The main change is a reduction of 30% in on-resistance during high-temperature operation at a junction temperature of 175°C. In practice, that could help designers limit conduction losses in systems that run hot or operate under sustained high load. In automotive powertrains, that may support smaller or potentially higher-output inverter stages. In industrial installations, it could help improve efficiency in power conversion blocks where thermal margins are tight.

SiC moves further into the mainstream

ROHM says it began supporting the bare-die business for the 5th generation SiC MOSFETs in 2025 and completed development in March 2026. Samples of discrete devices and modules using the technology are scheduled from July 2026.

The next step will be portfolio expansion. ROHM says it plans to add more breakdown voltage and package options while continuing to build out design tools and application support. That matters because wider SiC adoption depends not only on device performance, but also on packaging, qualification and the ease of integrating parts into complete power systems.

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