IT之家 6 月 20 日消息，中国科学院微电子研究所 6 月 17 日发布消息称，集成电路制造技术全国重点实验室团队联合北京超弦设备研究院，在基于 IGZO（铟镓锌氧化物）的 2T0C 三维动态随机存取存储器（3D DRAM）研究方面取得新进展，并提出基于 2T0C 单元结构的单步高层三维集成方案，首次展示了四层 3D 2T0C 结构。

相关成果论文《Highly stackable 3D DRAM of Dual-gate IGZO 2T0C with Record 3 bits / cell and 400s Data Retention》已入选 2026 IEEE Symposium on VLSI Technology and Circuits（VLSI 2026）。

As artificial intelligence and high-performance computing applications continue to develop, the industry's demand for high-capacity and high-bandwidth memory continues to increase. Traditional SRAM is limited by the 6T cell structure and is difficult to accommodate higher storage capacity; off-chip DRAM will affect bandwidth performance due to increased access latency.

The research team said that the 2T0C architecture based on IGZO can be integrated on the back process of logic chips and is considered to be a technical route that combines high capacity and high bandwidth.

However, existing 2T0C DRAM research mainly focuses on planar architecture and vertical 4F2 architecture, and there is still a lack of three-dimensional integration solutions that can achieve single-step multi-layer stacking, which limits further improvement of storage density. This research is carried out around this issue.

The new 3D DRAM proposed by the research team adopts both a vertical word line architecture and a dual-gate 2T0C cell design, and is optimized in terms of read margin, dual-gate read control stability, and manufacturing cost.

Among them, IGZO transistors based on dual-gate structures achieve better device performance and stability. The researchers said that the prepared 3D2T0C cell has both high-speed writing capabilities and long-term data retention capabilities-the data retention time reaches 400 seconds, and successfully achieved 3 bits / cell storage, thereby further improving the overall storage density.

The paper is led by Liao Fuxi, a postdoctoral fellow at the Institute of Microelectronics, China Academy of Sciences, Zhu Zhengyong, a researcher at the Beijing Institute of Superstring Equipment, Li Ling, a researcher at the Institute of Microelectronics, China Academy of Sciences, Yang Guanhua, an associate researcher, and Zhao Chao, a researcher at the Beijing Institute of Superstring Equipment, as co-authors.

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