IT之家 June 24 news, according to a report by the Korean media Chosun Ilbo today local time, Samsung Electronics has temporarily stopped production of 8Hi (8-layer stack) HBM3E memory, shifting capacity to the more market-demanding 12Hi HBM3E and HBM4.

The report pointed out that Samsung Electronics has planned a monthly capacity of 150,000 HBM front-end DRAM wafers for HBM, with 12Hi HBM3E and HBM4 currently each accounting for about half. 12Hi HBM3E is Samsung Electronics' current main HBM memory shipment product, while HBM4 serves next-generation AI chips such as the mass-produced NVIDIA Rubin GPU.

IT之家 noted that after setbacks during the HBM3/HBM3E era, Samsung Electronics has been catching up on HBM4, achieving mass production first in the industry; meanwhile, SK Hynix and Micron hold large unfulfilled orders for HBM3E, leaving them more room for capacity reallocation.

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