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Analyst Yu Fangbo of CITIC Securities has made a bold claim surrounding Huawei’s upcoming flagship SoC, the Kirin 9050, which will likely power the upcoming Mate 90 series. While we’ve consistently heard that Huawei and SMIC were successful in developing the 5nm process using existing DUV equipment, this lithography has never been employed for mass producing wafers, with both firms sticking to the older 7nm node for its improved yields and lower costs.
To scale past this massive hurdle, the Kirin 9050 is rumored to feature 3D IC stacking technology, which vertically stacks components to increase transistor density and performance without relying on the advanced 3nm process. Based on alleged test results, the Kirin 9050 outshines Apple’s A18 Pro, which is an impressive feat, assuming the commercial unit of Huawei’s silicon can repeat these results.

However, the post shared by @szslg is rife with ambiguity because not only is it mentioned which tests were performed to compare the Kirin 9050 to the A18 Pro, but the power draw is nowhere mentioned either. When running at unrestricted wattage, we’ve heard a rumor claiming that even an engineering sample of Exynos 2600 can outclass an M5.
Sadly, these claims become meaningless as these chipsets ultimately need to function in a mobile device, not a spacious controlled environment. Similarly, we’ve yet to hear about the Kirin 9050’s power draw, but we’re excited to learn that Huawei is expected to employ its LogicFolding Design technology to the silicon, bringing a host of upgrades such as increased transistor density, boosted clock speeds, and more to the table.
News Source: @szslg
About the author: Omar Sohail is a reporter and analyst for Wccftech's mobile section, specializing in the technology and business of the mobile industry. His expertise lies in the intricate hardware supply chain, covering developments in semiconductor manufacturing, chip lithography, and camera sensor technology.
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