Quantum annealers can provide non-local optimization by tunneling between states in a process that ideally eliminates memory of the initial configuration. We study the crossover between memory loss and retention due to quantum fluctuations, in a transverse Ising model on odd numbered antiferromagnetic rings of thousands of spins with periodic boundary conditions, by performing reverse quantum annealing experiments on three programmable superconducting flux qubit quantum annealers. After initializing the spins to contain a single domain wall, we then expose it to quantum fluctuations by turning on the transverse Zeeman energy. We characterize the crossover between memory retention at low transverse field, and memory loss at high transverse field by extracting the Shannon information entropy of magnetic domain wall distributions. We demonstrate a clear crossover in memory retention, and its dependence on hardware platform and simulation time. Our approach establishes a general probe of the interplay between quantum fluctuations and memory.