The pivotal storage density win achieved by solid-state devices over magnetic devices recently is a result of multiple innovations in physics, architecture, and signal processing. Constrained coding is used in Flash devices to increase reliability via mitigating inter-cell interference. Recently, capacity-achieving constrained codes were introduced to serve that purpose. While these codes result in minimal redundancy, they result in non-negligible complexity increase and access speed limitation since pages cannot be read separately. In this paper, we suggest new constrained coding schemes that have low-complexity and preserve the desirable high access speed in modern Flash devices. The idea is to eliminate error-prone patterns by coding data either only on the left-most page (binary coding) or only on the two left-most pages ($4$-ary coding) while leaving data on all the remaining pages uncoded. Our coding schemes are systematic and capacity-approaching. We refer to the proposed schemes as read-and-run (RR) constrained coding schemes. The $4$-ary RR coding scheme is introduced to limit the rate loss. We analyze the new RR coding schemes and discuss their impact on the probability of occurrence of different charge levels. We also demonstrate the performance improvement achieved via RR coding on a practical triple-level cell Flash device.